Magneto-Photoluminescence of InAs/InGaAs/InAlAs quantum well structures

Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of th...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2014-01
Main Authors: Terent'ev, Ya V, Danilov, S N, Loher, J, Schuh, D, Bougeard, D, Weiss, D, Durnev, M V, Tarasenko, S A, Mukhin, M S, Ivanov, S V, Ganichev, S D
Format: Article
Language:English
Subjects:
Circular polarization
Indium aluminum arsenides
Indium arsenides
Indium gallium arsenides
Photoluminescence
Polarization (spin alignment)
Quantum efficiency
Quantum wells
Radiative recombination
Zeeman effect
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by the Zeeman effect. Although in magnetic field the PL line are strongly circularly polarized, no energy shift between the counter-polarized PL lines was observed. The results suggest that the electron and the hole g-factor to be of the same sign and close magnitudes.
ISSN:2331-8422
DOI:10.48550/arxiv.1401.7515