Shot noise of a multiwalled carbon nanotube field effect transistor

We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 \(\mu\)S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we...

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Bibliographic Details
Published in:arXiv.org 2006-07
Main Authors: F Wu, Tsuneta, T, Tarkiainen, R, Gunnarsson, D, Wang, T H, Hakonen, P J
Format: Article
Language:English
Subjects:
Field effect transistors
Frequency ranges
Multi wall carbon nanotubes
Nanotubes
Noise
Semiconductor devices
Shot noise
Transconductance
Online Access:Get full text
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Summary:We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 \(\mu\)S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 \(\mu{V}/ \sqrt{Hz}\) for V>0 and V
ISSN:2331-8422
DOI:10.48550/arxiv.0606661