Giga-Hertz quantized charge pumping in bottom gate defined InAs nanowire quantum dots

Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, i.e., the controlled transport of individual electrons through an InAs NW quantum dot (QD) device at frequenci...

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Bibliographic Details
Published in:arXiv.org 2015-09
Main Authors: d'Hollosy, S, Jung, M, Baumgartner, A, Guzenko, V A, Madsen, M H, Nygård, J, Schönenberger, C
Format: Article
Language:English
Subjects:
Indium arsenides
Modulation
Nanowires
Pumping
Quantum dots
Quantum theory
Single electrons
Online Access:Get full text
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Summary:Semiconducting nanowires (NWs) are a versatile, highly tunable material platform at the heart of many new developments in nanoscale and quantum physics. Here, we demonstrate charge pumping, i.e., the controlled transport of individual electrons through an InAs NW quantum dot (QD) device at frequencies up to \(1.3\,\)GHz. The QD is induced electrostatically in the NW by a series of local bottom gates in a state of the art device geometry. A periodic modulation of a single gate is enough to obtain a dc current proportional to the frequency of the modulation. The dc bias, the modulation amplitude and the gate voltages on the local gates can be used to control the number of charges conveyed per cycle. Charge pumping in InAs NWs is relevant not only in metrology as a current standard, but also opens up the opportunity to investigate a variety of exotic states of matter, e.g. Majorana modes, by single electron spectroscopy and correlation experiments.
ISSN:2331-8422
DOI:10.48550/arxiv.1509.01574