High-Performance Monolayer WS2 Field-effect Transistors on High-k Dielectrics

The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regi...

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Bibliographic Details
Published in:arXiv.org 2015-10
Main Authors: Cui, Yang, Xin, Run, Yu, Zhihao, Pan, Yiming, Zhun-Yong Ong, Wei, Xiaoxu, Wang, Junzhuan, Nan, Haiyan, Ni, Zhenhua, Wu, Yun, Chen, Tangsheng, Shi, Yi, Wang, Baigeng, Zhang, Gang, Yong-Wei, Zhang, Wang, Xinran
Format: Article
Language:English
Subjects:
Aluminum oxide
Charge transport
Electron transport
Field effect transistors
Monolayers
Organic chemistry
Semiconductor devices
Online Access:Get full text
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Summary:The combination of high-quality Al2O3 dielectric and thiol chemistry passivation can effectively reduce the density of interface traps and Coulomb impurities of WS2, leading to a significant improvement of the mobility and a transition of the charge transport from the insulating to the metallic regime. A record high mobility of 83 cm2/Vs (337 cm2/Vs) is reached at room temperature (low temperature) for monolayer WS2. A theoretical model for electron transport is also developed.
ISSN:2331-8422
DOI:10.48550/arxiv.1510.00826