Loading…
Epitaxial lift-off for solid-state cavity quantum electrodynamics
We present a new approach to incorporate self-assembled quantum dots into a Fabry-P\'{e}rot-like microcavity. Thereby a 3\(\lambda\)/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as...
Saved in:
Published in: | arXiv.org 2015-05 |
---|---|
Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | We present a new approach to incorporate self-assembled quantum dots into a Fabry-P\'{e}rot-like microcavity. Thereby a 3\(\lambda\)/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4,100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the semiconductor - mirror interface, demonstrating that the epitaxial lift-off procedure is a promising procedure for cavity quantum electrodynamics in the solid state. As a first step in this direction, we demonstrate a clear cavity-quantum dot interaction in the weak coupling regime with a Purcell factor in the order of 3. Estimations of the coupling strength via the Purcell factor suggests that we are close to the strong coupling regime. |
---|---|
ISSN: | 2331-8422 |
DOI: | 10.48550/arxiv.1505.00658 |