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Epitaxial lift-off for solid-state cavity quantum electrodynamics

We present a new approach to incorporate self-assembled quantum dots into a Fabry-P\'{e}rot-like microcavity. Thereby a 3\(\lambda\)/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as...

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Bibliographic Details
Published in:arXiv.org 2015-05
Main Authors: Greuter, Lukas, Najer, Daniel, Kuhlmann, Andreas V, Valentin, Sascha, Ludwig, Arne, Wieck, Andreas D, Starosielec, Sebastian, Warburton, Richard J
Format: Article
Language:English
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Summary:We present a new approach to incorporate self-assembled quantum dots into a Fabry-P\'{e}rot-like microcavity. Thereby a 3\(\lambda\)/4 GaAs layer containing quantum dots is epitaxially removed and attached by van der Waals bonding to one of the microcavity mirrors. We reach a finesse as high as 4,100 with this configuration limited by the reflectivity of the dielectric mirrors and not by scattering at the semiconductor - mirror interface, demonstrating that the epitaxial lift-off procedure is a promising procedure for cavity quantum electrodynamics in the solid state. As a first step in this direction, we demonstrate a clear cavity-quantum dot interaction in the weak coupling regime with a Purcell factor in the order of 3. Estimations of the coupling strength via the Purcell factor suggests that we are close to the strong coupling regime.
ISSN:2331-8422
DOI:10.48550/arxiv.1505.00658