Proximity Driven Enhanced Magnetic Order at Ferromagnetic Insulator / Magnetic Topological Insulator Interface

Magnetic exchange driven proximity effect at a magnetic insulator / topological insulator (MI/TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the M...

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Bibliographic Details
Published in:arXiv.org 2015-05
Main Authors: Li, Mingda, Cui-Zu, Chang, Kirby, Brian J, Jamer, Michelle, Cui, Wenping, Wu, Lijun, Zhu, Yimei, Heiman, Don, Li, Ju, Moodera, Jagadeesh
Format: Article
Language:English
Subjects:
Antiferromagnetism
Antimony
Coupling
Doping
Energy dissipation
Exchanging
Ferromagnetism
Heterostructures
Proximity
Proximity effect (electricity)
Tellurium
Topological insulators
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Summary:Magnetic exchange driven proximity effect at a magnetic insulator / topological insulator (MI/TI) interface provides a rich playground for novel phenomena as well as a way to realize low energy dissipation quantum devices. Here we report a dramatic enhancement of proximity exchange coupling in the MI / magnetic-TI EuS / Sb\(_{2-x}\)V\(_x\)Te\(_3\) hybrid heterostructure, where V doping is used to drive the TI (Sb\(_{2}\)Te\(_3\)) magnetic. We observe an artificial antiferromagnetic-like structure near the MI/TI interface, which may account for the enhanced proximity coupling. The interplay between the proximity effect and doping provides insights into controllable engineering of magnetic order using a hybrid heterostructure.
ISSN:2331-8422
DOI:10.48550/arxiv.1505.02306