Theoretical search for half-Heusler topological insulators

We have performed ab-initio band structure calculations on more than two thousand half-Heusler compounds in order to search for new candidates for topological insulators. Herein, LiAuS and NaAuS are found to be the strongest topological insulators with the bulk band gap of 0.20 and 0.19 eV, respecti...

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Bibliographic Details
Published in:arXiv.org 2014-05
Main Authors: Shi-Yuan, Lin, Xiao-Bao, Yang, Yu-Jun, Zhao, Shu-Chun, Wu, Felser, Claudia, Binghai Yan
Format: Article
Language:English
Subjects:
Band gap
Energy gap
Epitaxial growth
Surface layers
Topological insulators
Topology
Online Access:Get full text
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Summary:We have performed ab-initio band structure calculations on more than two thousand half-Heusler compounds in order to search for new candidates for topological insulators. Herein, LiAuS and NaAuS are found to be the strongest topological insulators with the bulk band gap of 0.20 and 0.19 eV, respectively, different from the zero band gap feature reported in other Heusler topological insulators. Due to the inversion asymmetry of the Heusler structure, their topological surface states on the top and bottom surfaces exhibit p-type and n-type carriers, respectively. Thus, these materials may serve as an ideal platform for the realization of topological magneto-electric effects as polar topological insulators. Moreover, these topological surface states exhibit the right-hand spin-texture in the upper Dirac cone, which distinguish them from currently known topological insulator materials. Their topological nontrivial character remains robust against in-plane strains, which makes them suitable for epitaxial growth of films.
ISSN:2331-8422
DOI:10.48550/arxiv.1405.1305