Twist-controlled Resonant Tunnelling between Monolayer and Bilayer Graphene

We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using a self-consistent description of the device's electros...

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Bibliographic Details
Published in:arXiv.org 2015-12
Main Authors: Lane, Thomas L M, Wallbank, John R, Fal'ko, Vladimir I
Format: Article
Language:English
Subjects:
Bilayers
Boron nitride
Crystallography
Current voltage characteristics
Graphene
Heterostructures
Monolayers
Online Access:Get full text
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Summary:We investigate the current-voltage characteristics of a field-effect tunnelling transistor comprised of both monolayer and bilayer graphene with well-aligned crystallographic axes, separated by three layers of hexagonal boron nitride. Using a self-consistent description of the device's electrostatic configuration we relate the current to three distinct tunable voltages across the system and hence produce a two-dimensional map of the I-V characteristics in the low energy regime. We show that the use of gates either side of the heterostructure offers a fine degree of control over the device's rich array of characteristics, as does varying the twist between the graphene electrodes.
ISSN:2331-8422
DOI:10.48550/arxiv.1512.03028