Temperature regimes of formation of nanometer periodic structure of adsorbed atoms in GaAs semiconductors under the action of laser irradiation

The theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which occurs as a result of the self-consistent interaction of adatoms with the surface acoustic wave and electronic subsystem is developed. Temperature regimes of formation of nanoclusters on \({n}\)-GaAs surface unde...

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Bibliographic Details
Published in:arXiv.org 2015-12
Main Authors: Peleshchak, R M, Kuzyk, O V, Dan'kiv, O O
Format: Article
Language:English
Subjects:
Adatoms
Deformation
Gallium arsenide
Ions
Irradiation
Lasers
Nucleation
Periodic structures
Subsystems
Surface acoustic waves
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Summary:The theory of nucleation of nanoscale structures of the adsorbed atoms (adatoms), which occurs as a result of the self-consistent interaction of adatoms with the surface acoustic wave and electronic subsystem is developed. Temperature regimes of formation of nanoclusters on \({n}\)-GaAs surface under the action of laser irradiation are investigated. The offered model permits to choose optimal technological parameters (temperature, doping degree, intensity of laser irradiation) for the formation of the surface periodic defect-deformation structures under the action of laser irradiation.
ISSN:2331-8422
DOI:10.48550/arxiv.1512.07801