Parallel Stitching of Two-Dimensional Materials

Diverse parallel stitched two-dimensional heterostructures are synthesized, including metal-semiconductor (graphene-MoS2), semiconductor-semiconductor (WS2-MoS2), and insulator-semiconductor (hBN-MoS2), directly through selective sowing of aromatic molecules as the seeds in chemical vapor deposition...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2015-12
Main Authors: Ling, Xi, Lin, Yuxuan, Ma, Qiong, Wang, Ziqiang, Song, Yi, Yu, Lili, Huang, Shengxi, Fang, Wenjing, Zhang, Xu, Hsu, Allen L, Bie, Yaqing, Yi-Hsien, Lee, Zhu, Yimei, Wu, Lijun, Li, Ju, Jarillo-Herrero, Pablo, Dresselhaus, Mildred S, Palacios, Tomás, Kong, Jing
Format: Article
Language:English
Subjects:
Chemical vapor deposition
Graphene
Heterostructures
Integrated circuits
Molybdenum disulfide
Organic chemistry
Seeds
Stitching
Two dimensional materials
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Diverse parallel stitched two-dimensional heterostructures are synthesized, including metal-semiconductor (graphene-MoS2), semiconductor-semiconductor (WS2-MoS2), and insulator-semiconductor (hBN-MoS2), directly through selective sowing of aromatic molecules as the seeds in chemical vapor deposition (CVD) method. Our methodology enables the large-scale fabrication of lateral heterostructures with arbitrary patterns, and clean and precisely aligned interfaces, which offers tremendous potential for its application in integrated circuits.
ISSN:2331-8422
DOI:10.48550/arxiv.1512.04492