Electric-Field-Modulated Nonvolatile Resistance Switching in VO2/PMN-PT(111) Heterostructures

The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO2/PMN-PT(111) hererostructures at room temperature. For a substrat...

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Bibliographic Details
Published in:arXiv.org 2014-04
Main Authors: Bowen, Zhi, Gao, Guanyin, Xu, Haoran, Chen, Feng, Tan, Xuelian, Chen, Pingfan, Wang, Lingfei, Wu, Wenbin
Format: Article
Language:English
Subjects:
Electric fields
Electrical resistance
Electronic devices
Ferroelectric domains
Ferroelectric materials
Ferroelectricity
Heterostructures
Piezoelectricity
Substrates
Switching
Thin films
Vanadium oxides
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Summary:The electric-field-modulated resistance switching in VO2 thin films grown on piezoelectric (111)-0.68Pb(Mg1/3Nb2/3)O3-0.32PbTiO3 (PMN-PT) substrates has been investigated. Large relative change in resistance (10.7%) was observed in VO2/PMN-PT(111) hererostructures at room temperature. For a substrate with a given polarization direction, stable resistive states of VO2 films can be realized even when the applied electric fields are removed from the heterostructures. By sweeping electric fields across the heterostructure appropriately, multiple resistive states can be achieved. These stable resistive states result from the different stable remnant strain states of substrate, which is related to the rearrangements of ferroelectric domain structures in PMN-PT(111) substrate. The resistance switching tuned by electric field in our work may have potential applications for novel electronic devices.
ISSN:2331-8422
DOI:10.48550/arxiv.1403.6388