Experimental Evidence of Ferroelectric Negative Capacitance in Nanoscale Heterostructures

We report a proof-of-concept demonstration of negative capacitance effect in a nanoscale ferroelectric-dielectric heterostructure. In a bilayer of ferroelectric, Pb(Zr0.2Ti0.8)O3 and dielectric, SrTiO3, the composite capacitance was observed to be larger than the constituent SrTiO3 capacitance, indi...

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Bibliographic Details
Published in:arXiv.org 2011-03
Main Authors: Asif Islam Khan, Bhowmik, Debanjan, Yu, Pu, Kim, Sung Joo, Pan, Xiaoqing, Ramamoorthy Ramesh, Salahuddin, Sayeef
Format: Article
Language:English
Subjects:
Bilayers
Capacitance
Ferroelectric materials
Ferroelectricity
Heterostructures
Iron constituents
Mean field theory
MOSFETs
Qualitative analysis
Strontium titanates
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Summary:We report a proof-of-concept demonstration of negative capacitance effect in a nanoscale ferroelectric-dielectric heterostructure. In a bilayer of ferroelectric, Pb(Zr0.2Ti0.8)O3 and dielectric, SrTiO3, the composite capacitance was observed to be larger than the constituent SrTiO3 capacitance, indicating an effective negative capacitance of the constituent Pb(Zr0.2Ti0.8)O3 layer. Temperature is shown to be an effective tuning parameter for the ferroelectric negative capacitance and the degree of capacitance enhancement in the heterostructure. Landau's mean field theory based calculations show qualitative agreement with observed effects. This work underpins the possibility that by replacing gate oxides by ferroelectrics in MOSFETs, the sub threshold slope can be lowered below the classical limit (60 mV/decade).
ISSN:2331-8422
DOI:10.48550/arxiv.1103.4419