A Graphene-based Hot Electron Transistor

We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of...

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Bibliographic Details
Published in:arXiv.org 2013-06
Main Authors: Vaziri, Sam, Lupina, Grzegorz, Henkel, Christoph, Smith, Anderson D, Östling, Mikael, Dabrowski, Jarek, Lippert, Gunther, Mehr, Wolfgang, Lemme, Max C
Format: Article
Language:English
Subjects:
Graphene
Hot electrons
Semiconductor devices
Silicon
Transistors
Online Access:Get full text
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Summary:We experimentally demonstrate DC functionality of graphene-based hot electron transistors, which we call Graphene Base Transistors (GBT). The fabrication scheme is potentially compatible with silicon technology and can be carried out at the wafer scale with standard silicon technology. The state of the GBTs can be switched by a potential applied to the transistor base, which is made of graphene. Transfer characteristics of the GBTs show ON/OFF current ratios exceeding 50.000.
ISSN:2331-8422
DOI:10.48550/arxiv.1211.2949