The annealing mechanism of AuGe/Ni/Au ohmic contacts to a two-dimensional electron gas in GaAs/AlGaAs heterostructures

Ohmic contacts to a two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures are often realized by annealing of AuGe/Ni/Au that is deposited on its surface. We studied how the quality of this type of ohmic contact depends on the annealing time and temperature, and how optimal parameters d...

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Bibliographic Details
Published in:arXiv.org 2008-09
Main Authors: Koop, E J, Iqbal, M J, Limbach, F, Boute, M, van Wees, B J, Reuter, D, Wieck, A D, Kooi, B J, C H van der Wal
Format: Article
Language:English
Subjects:
Aluminum gallium arsenides
Annealing
Contact resistance
Electron gas
Energy dispersive X ray spectroscopy
Energy transmission
Gallium arsenide
Heterostructures
Parameters
Transmission electron microscopy
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Summary:Ohmic contacts to a two-dimensional electron gas (2DEG) in GaAs/AlGaAs heterostructures are often realized by annealing of AuGe/Ni/Au that is deposited on its surface. We studied how the quality of this type of ohmic contact depends on the annealing time and temperature, and how optimal parameters depend on the depth of the 2DEG below the surface. Combined with transmission electron microscopy and energy-dispersive X-ray spectrometry studies of the annealed contacts, our results allow for identifying the annealing mechanism and proposing a model that can predict optimal annealing parameters for a certain heterostructure.
ISSN:2331-8422
DOI:10.48550/arxiv.0809.0928