Tuning hole mobility in InP nanowires

Transport properties of holes in InP nanowires were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature and strain fields. Using molecular dynamics, we simulate nanowire structures, LO-phonon energy renormalization and lifetime. The valence band g...

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Bibliographic Details
Published in:arXiv.org 2012-06
Main Authors: M Rebello Sousa Dias, Picinin, A, Lopez-Richard, V, Ulloa, S E, Castelano, L K, Rino, J P, Marques, G E
Format: Article
Language:English
Subjects:
Deformation effects
Electron phonon interactions
Hole mobility
Molecular dynamics
Nanowires
Phonons
Temperature effects
Transport properties
Valence band
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Summary:Transport properties of holes in InP nanowires were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature and strain fields. Using molecular dynamics, we simulate nanowire structures, LO-phonon energy renormalization and lifetime. The valence band ground state changes between light- and heavy-hole character, as the strain fields and the nanowire size are changed. Drastic changes in the mobility arise with the onset of resonance between the LO-phonons and the separation between valence subbands.
ISSN:2331-8422
DOI:10.48550/arxiv.1206.1283