Doping of Bi2Te3 using electron irradiation

Electron irradiation is investigated as a way to dope the topological insulator Bi2Te3. For this, p-type Bi2Te3 single crystals have been irradiated with 2.5 MeV electrons at room temperature and electrical measurements have been performed in-situ as well as ex-situ in magnetic fields up to 14 T. Th...

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Bibliographic Details
Published in:arXiv.org 2013-12
Main Authors: Rischau, C W, Leridon, B, Fauqué, B, Metayer, V, C J van der Beek
Format: Article
Language:English
Subjects:
Bismuth tellurides
Carrier density
Conduction bands
Conversion
Crystal defects
Electrical measurement
Electrical resistivity
Electron irradiation
Hall effect
Magnetic fields
Single crystals
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Summary:Electron irradiation is investigated as a way to dope the topological insulator Bi2Te3. For this, p-type Bi2Te3 single crystals have been irradiated with 2.5 MeV electrons at room temperature and electrical measurements have been performed in-situ as well as ex-situ in magnetic fields up to 14 T. The defects created by irradiation act as electron donors allowing the compensation of the initial hole-type conductivity of the material as well as the conversion of the conductivity from p- to n-type. The changes in carrier concentration are investigated using Hall effect and Shubnikov-de Haas (SdH) oscillations, clearly observable in the p-type samples before irradiation, but also after the irradiation-induced conversion of the conductivity to n-type. The SdH patterns observed for the magnetic field along the trigonal axis can be entirely explained assuming the contribution of only one valence and conduction band, respectively, and Zeeman-splitting of the orbital levels.
ISSN:2331-8422
DOI:10.48550/arxiv.1312.0242