Dynamics of charged domain walls in ferroelectrics

• Published in: arXiv.org 2012-01
• Main Authors: Gureev, Maxim Y, Mokry, Pavel, Tagantsev, Alexander K, Setter, Nava
• Format: Article
• Language: English
• Subjects: Charging; Crystal defects; Current carriers; Deoxidizing; Domain walls; Electric fields; Ferroelectric materials; Ferroelectricity; Ferroelectrics; Magnetic fields; Parameter sensitivity
• ISSN: 2331-8422

The interaction of electric field with charged domain walls in ferroelectrics is theoretically addressed. A general expression for the force acting per unit area of a charged domain wall carrying free charge is derived. It is shown that, in proper ferroelectrics, the free charge carried by the wall is dependent on the size of the adjacent domains. As a result, it was found that the mobility of such domain wall (with respect to the applied field) is sensitive to the parameters of the domain pattern containing this wall. The problem of the force acting on a planar charged 180-degree domain wall normal to the polarization direction in a periodic domain pattern in a proper ferroelectric is analytically solved in terms of Landau theory. It is shown that, in small applied fields (in the linear regime), the forces acting on walls in such pattern increase with decreasing the wall spacing, the direction of the forces coinciding with those for the case of the corresponding neutral walls. At the same time, for large enough wall spacings and large enough fields, these forces can be of the opposite sign. It is shown that the domain pattern considered is unstable in a defect-free ferroelectric. The poling of a crystal containing such pattern, stabilized by the pinning pressure, is also considered. It is shown that, except for a special situation, the presence of charge domain walls can make poling more difficult. It is demonstrated that the results obtained are also applicable to zig-zag walls under the condition that the zig-zag amplitude is much smaller than the domain wall spacing.