Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance

We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (...

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Bibliographic Details
Published in:arXiv.org 2011-12
Main Authors: Jock, R M, Shankar, S, Tyryshkin, A M, He, Jianhua, Eng, K, Childs, K D, Tracy, L A, Lilly, M P, Carroll, M S, Lyon, S A
Format: Article
Language:English
Subjects:
Electron paramagnetic resonance
Electron spin
Electrons
Heterostructures
Metal oxides
MOS devices
Quantitative analysis
Silicon dioxide
Spin resonance
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Summary:We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices and demonstrate it on two MOS devices fabricated at different laboratories. Despite displaying similar low temperature (4.2 K) peak mobilities, our ESR data reveal a significant difference in the Si/SiO2 interface quality of these two devices, specifically an order of magnitude difference in the number of shallow trapped charges at the Si/SiO2 interfaces. Thus, our ESR method allows a quantitative evaluation of the Si/SiO2 interface quality at low electron densities, where conventional mobility measurements are not possible.
ISSN:2331-8422
DOI:10.48550/arxiv.1110.0757