High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions

Magnetic tunnel junctions with Fe1+xCo2-xSi (0 < x < 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262 % at 15 K and 159 % at room temperature were observed for x=0.75. Correlations of the annealing te...

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Published in:arXiv.org 2013-08
Main Authors: Sterwerf, Christian, Meinert, Markus, Jan-Michael Schmalhorst, Reiss, Günter
Format: Article
Language:English
Subjects:
Computer memory
Magnesium oxide
Magnetoresistance
Magnetoresistivity
Stoichiometry
Substrates
Temperature dependence
Tunnel junctions
Tunnel magnetoresistance
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Jan-Michael Schmalhorst
Reiss, Günter
description Magnetic tunnel junctions with Fe1+xCo2-xSi (0 < x < 1) electrodes and MgO barrier were prepared on MgO substrates by magnetron co-sputtering. Maximum tunnel magnetoresistance (TMR) ratios of 262 % at 15 K and 159 % at room temperature were observed for x=0.75. Correlations of the annealing temperature dependent atomic ordering and TMR amplitude are discussed. The high TMR for an intermediate stoichiometry is ascribed to the adjustment of the Fermi energy within a minority spin pseudo gap.
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subjects Computer memory
Magnesium oxide
Magnetoresistance
Magnetoresistivity
Stoichiometry
Substrates
Temperature dependence
Tunnel junctions
Tunnel magnetoresistance
title High TMR ratio in Co2FeSi and Fe2CoSi based magnetic tunnel junctions
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