Confinement effects and surface-induced charge carriers in Bi Quantum Wires

We present measurements of Shubnikov-de Haas oscillations in arrays of bismuth nanowires with diameters comparable to the Fermi wavelength. For 80-nm wires the hole concentration is less than 30% of that for bulk Bi, consistent with current models of quantum confinement effects. However, 30-nm wires...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2003-11
Main Authors: Huber, T E, Nikolaeva, A, Konopko, L, Gitsu, D, Foss, C A, Jr, Graf, M J
Format: Article
Language:English
Subjects:
Bismuth
Carrier density
Current carriers
Fermi surfaces
Nanowires
Quantum confinement
Quantum wires
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We present measurements of Shubnikov-de Haas oscillations in arrays of bismuth nanowires with diameters comparable to the Fermi wavelength. For 80-nm wires the hole concentration is less than 30% of that for bulk Bi, consistent with current models of quantum confinement effects. However, 30-nm wires nanowires which are predicted to be a semiconducting show a nearly isotropic short period of 0.025 T-1, consistent with a heavy carrier concentration five times that of bulk Bi. These results are discussed in terms of surface-induced charge carriers in a spherical Fermi surface pocket that are uniformly distributed in the 30-nm nanowire volume and that inhibit the semimetal-to-semiconductor transition.
ISSN:2331-8422
DOI:10.48550/arxiv.0311102