Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide

Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to impro...

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Bibliographic Details
Published in:arXiv.org 2009-07
Main Authors: Tedesco, Joseph L, VanMil, Brenda L, Myers-Ward, Rachael L, Culbertson, James C, Jernigan, Glenn G, Campbell, Paul M, McCrate, Joseph M, Kitt, Stephen A, Eddy, Charles R, Jr, Gaskill, D Kurt
Format: Article
Language:English
Subjects:
Argon
Atomic force microscopy
Carrier density
Carrier mobility
Carrier transport
Epitaxial growth
Graphene
Hall effect
High vacuum
Morphology
Silicon carbide
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Summary:Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free carrier transport studies were conducted through Hall effect measurements, and carrier mobilities were found to increase and sheet carrier densities were found to decrease for those films grown under argon as compared to high vacuum conditions. The improved mobilities and concurrent decreases in sheet carrier densities suggest a decrease in scattering in the films grown under argon.
ISSN:2331-8422
DOI:10.48550/arxiv.0907.5029