Energy loss rates of hot Dirac fermions in epitaxial, exfoliated and CVD graphene

Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations,...

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Bibliographic Details
Published in:arXiv.org 2012-12
Main Authors: A M R Baker J A Alexander-Webber, Altebaeumer, T, McMullan, S D, T J B M Janssen, Tzalenchuk, A, Lara-Avila, S, Kubatkin, S, Yakimova, R, C -T Lin, L -J Li, Nicholas, R J
Format: Article
Language:English
Subjects:
Carrier density
Chemical vapor deposition
Correlation analysis
Energy
Energy dissipation
Energy measurement
Epitaxial growth
Exfoliation
Fermions
Graphene
Organic chemistry
Physicists
Temperature dependence
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Summary:Energy loss rates for hot carriers in graphene have been measured using graphene produced by epitaxial growth on SiC, exfoliation and chemical vapour deposition (CVD). It is shown that the temperature dependence of the energy loss rates measured with high-field damped Shubnikov-de Haas oscillations, and the temperature dependence of the weak localization peak close to zero field correlate well, with the high-field measurements understating the energy loss rates by \(\sim\)40% compared to the low-field results. The energy loss rates for all graphene samples follow a universal scaling of \(T_{e}^4\) at low temperatures and depend weakly on carrier density \(\propto\) n\(^{-1/2}\) evidence for enhancement of the energy loss rate due to disorder in CVD samples.
ISSN:2331-8422