Distinguishing photon and polariton lasing from GaAs microcavities by spectral and temporal analysis of the two-threshold behavior

We compare polariton lasing with photon lasing of a planar GaAs/GaAlAs microcavity with zero detuning between the bare cavity mode and the bare exciton mode. For the emission from the lower energy-momentum dispersion branch we find a two-threshold behavior of the ground state in the input-output cur...

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Bibliographic Details
Published in:arXiv.org 2011-01
Main Authors: Jean-Sebastian Tempel, Veit, Franziska, Aßmann, Marc, Kreilkamp, Lars Erik, Rahimi-Iman, Arash, Löffler, Andreas, Höfling, Sven, Reitzenstein, Stephan, Worschech, Lukas, chel, Alfred, Bayer, Manfred
Format: Article
Language:English
Subjects:
Dispersion
Emission
Excitons
Gallium arsenide
Lasing
Microcavities
Polaritons
Pulse duration
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Summary:We compare polariton lasing with photon lasing of a planar GaAs/GaAlAs microcavity with zero detuning between the bare cavity mode and the bare exciton mode. For the emission from the lower energy-momentum dispersion branch we find a two-threshold behavior of the ground state in the input-output curve where each transition is accompanied by characteristic changes of the in-plane mode dispersion. In particular, we show that the thresholds are unambiguously evidenced in the photon statistics of the emission based on the second-order correlation function. Moreover, the distinct two-threshold behavior is confirmed in the evolution of the emission pulse duration.
ISSN:2331-8422