STM-induced surface aggregates on metals and oxidized silicon

We have observed an aggregation of carbon or carbon derivatives on platinum and natively oxidized silicon surfaces during STM measurements in ultra-high vacuum on solvent-cleaned samples previously structured by e-beam lithography. We have imaged the aggregated layer with scanning tunneling microsco...

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Published in:arXiv.org 2012-08
Main Authors: Stöffler, Dominik, Hilbert von Löhneysen, Hoffmann, Regina
Format: Article
Language:English
Subjects:
Carbon
Electron beams
High vacuum
Platinum
Scanning electron microscopy
Scanning tunneling microscopy
Silicon
Thickness
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Hilbert von Löhneysen
Hoffmann, Regina
description We have observed an aggregation of carbon or carbon derivatives on platinum and natively oxidized silicon surfaces during STM measurements in ultra-high vacuum on solvent-cleaned samples previously structured by e-beam lithography. We have imaged the aggregated layer with scanning tunneling microscopy (STM) as well as scanning electron microscopy (SEM). The amount of the aggregated material increases with the number of STM scans and with the tunneling voltage. Film thicknesses of up to 10 nm with five successive STM measurements have been obtained.
doi_str_mv 10.48550/arxiv.1208.5336
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subjects Carbon
Electron beams
High vacuum
Platinum
Scanning electron microscopy
Scanning tunneling microscopy
Silicon
Thickness
title STM-induced surface aggregates on metals and oxidized silicon
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