ZnO based transparent thin film transistor grown by aerosol assisted CVD

The communication reports the characterization of n + -Al:ZnO/Al 2 O 3 /n-ZnO thin film transistors (TFTs) developed by using an indigenously designed low-cost aerosol assisted chemical vapour deposition (AACVD) system. UV–VIS spectroscopy yields the bandgap energies of ZnO and Al:ZnO thin films as...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2018-09, Vol.29 (17), p.15156-15162
Main Authors: Kaushik, Vipin K., Mukherjee, C., Sen, P. K.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemical vapor deposition
Chemistry and Materials Science
Materials Science
Optical and Electronic Materials
Organic chemistry
Photovoltaic cells
Semiconductor devices
Thin film transistors
Thin films
Threshold voltage
Zinc oxide
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Summary:The communication reports the characterization of n + -Al:ZnO/Al 2 O 3 /n-ZnO thin film transistors (TFTs) developed by using an indigenously designed low-cost aerosol assisted chemical vapour deposition (AACVD) system. UV–VIS spectroscopy yields the bandgap energies of ZnO and Al:ZnO thin films as 3.30 and 3.34 eV, respectively. The average optical transmittance of the TFT is found to be around 77%. The TFT has a double top gate structure with Al:ZnO thin film as gate, source and drain terminals, ZnO thin film as channel layer while Al 2 O 3 acts as the dielectric layer. Transfer and output characteristics of the TFT have been measured to study the variation of threshold voltage, current On/Off ratio, saturation field effect mobility and subthreshold swing parameters as functions of drain-to-source voltage. The present work establishes the good quality indigenous fabrication of p-channel TFT using AACVD system with results agreeing very well with the results available in the literature.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-018-9657-0