Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties

The electronic structure of InAs quantum dots covered with the GaAs(1-y)Sb(y) strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation...

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Bibliographic Details
Published in:arXiv.org 2012-09
Main Authors: Klenovský, P, Křápek, V, Munzar, D, Humlíček, J
Format: Article
Language:English
Subjects:
Blue shift
Doppler effect
Electric fields
Electronic structure
Localization
Optical properties
Photoluminescence
Piezoelectricity
Quantum dots
Quantum theory
Red shift
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Summary:The electronic structure of InAs quantum dots covered with the GaAs(1-y)Sb(y) strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19 type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using a vertical electric field.
ISSN:2331-8422
DOI:10.48550/arxiv.1209.6234