A tunable, dual mode field-effect or single electron transistor

A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SE...

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Bibliographic Details
Published in:arXiv.org 2012-01
Main Authors: Roche, Benoît, Voisin, Benoit, Jehl, Xavier, Wacquez, Romain, Sanquer, Marc, Vinet, Maud, Deshpande, Veeresh, Previtali, Bernard
Format: Article
Language:English
Subjects:
Electrons
Field effect transistors
Metal oxide semiconductors
Potential gradient
Semiconductor devices
Silicon
Single-electron transistors
Transistors
Online Access:Get full text
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Summary:A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on the back gate polarisation, an electron island is accumulated under the front gate of the device (SET regime), or a field-effect transistor is obtained by pinching off a bottom channel with a negative front gate voltage. The gradual transition between these two cases is observed. This dual function uses both vertical and horizontal tunable potential gradients in non-overlapped silicon-on-insulator channel.
ISSN:2331-8422
DOI:10.48550/arxiv.1201.3760