Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient

From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the phot...

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Bibliographic Details
Published in:arXiv.org 2011-06
Main Authors: Murthy, D H K, T Xu, Chen, W H, Houtepen A, J, Savenije, T J, Siebbeles, L D A, Nys, J P, Krzeminski, Christophe, Grandidier, Bruno, Stiévenard, Didier, Pareige, Philippe, Jomard, F, Patriache, Gilles, Lebedev, O I
Format: Article
Language:English
Subjects:
Carrier lifetime
Charge efficiency
Chemical composition
Current carriers
Electric fields
Morphology
Nanowires
Organic chemistry
Silicon
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Summary:From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to a higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.
ISSN:2331-8422
DOI:10.48550/arxiv.1106.5642