Junction properties analysis of silicon back-to-back Schottky diode with reduced graphene oxide Schottky electrodes

Reduced graphene oxide (rGO)/silicon (Si) Schottky junction possesses promising attributes for various applications such as chemical sensor and photodetector. In this paper, a fabrication of simple back-to-back rGO/Si Schottky junction structure is presented. The device was fabricated via wet proces...

Full description

Saved in:
Bibliographic Details
Published in:Microelectronic engineering 2018-09, Vol.196, p.32-37
Main Authors: Azmi, Siti Nadiah Che, Rahman, Shaharin Fadzli Abd, Nawabjan, Amirjan, Hashim, Abdul Manaf
Format: Article
Language:English
Subjects:
Ascorbic acid
Back-to-back structure
Band gap
Barriers
Chemical reduction
Chemical sensors
Electrical measurement
Gaussian distribution
Graphene
Inhomogeneity
Insulation
Normal distribution
Organic chemistry
Reduced graphene oxide
Schottky diodes
Schottky junction
Semiconductors
Silicon
Silicon carbide
Standard deviation
Vacuum filtration
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Reduced graphene oxide (rGO)/silicon (Si) Schottky junction possesses promising attributes for various applications such as chemical sensor and photodetector. In this paper, a fabrication of simple back-to-back rGO/Si Schottky junction structure is presented. The device was fabricated via wet processes such as vacuum filtration, patterning by delamination, wet transfer and chemical reduction by ascorbic acid. From the current-voltage measurement, series resistance, barrier height and ideality factor were investigated at different temperature. Barrier height increases and ideality factor decreases with the increase of temperature indicating the inhomogeneity of the junction interface. By considering the Gaussian distribution of barrier height, the fabricated Schottky junction was shown to possess the mean barrier height of 1.24 eV with standard deviation value of 0.16 eV. The obtained mean barrier height was larger than the bandgap of Si, indicating the presence of thin insulation layer at the interface.
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2018.04.020