Optical Properties of Manganese Doped Wide Band Gap ZnS and ZnO

Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1...

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Bibliographic Details
Published in:arXiv.org 2011-07
Main Authors: Godlewski, M, Wojcik-Glodowska, A, Guziewicz, E, Yatsunenko, S, Zakrzewski, A, Dumont, Y, Chikoidze, E, Phillips, M R
Format: Article
Language:English
Subjects:
Atomic layer epitaxy
Low temperature
Manganese
Metalorganic chemical vapor deposition
Optical properties
Photoionization
Vapor phase epitaxy
Vapor phases
Zinc oxide
Zinc sulfide
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Summary:Optical properties of ZnMnO layers grown at low temperature by Atomic Layer Deposition and Metalorganic Vapor Phase Epitaxy are discussed and compared to results obtained for ZnMnS samples. Present results suggest a double valence of Mn ions in ZnO lattice. Strong absorption, with onset at about 2.1 eV, is tentatively related to Mn 2+ to 3+ photoionization. Mechanism of emission deactivation in ZnMnO is discussed and is explained by the processes following the assumed Mn 2+ to 3+ recharging.
ISSN:2331-8422
DOI:10.48550/arxiv.1107.5178