Correlation between microstructure deflections and film/substrate curvature under generalized stress fields

In this article we develop an analytical theory that correlates the macroscopic curvature of stressed film/substrate systems with the microscopic in-plane and out-of-plane deflections of planar rotators. Extending this stress-deflection relations in the case of nonlinear stress fields and validating...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2011-10
Main Authors: Camarda, Massimo, Anzalone, Ruggero, D'Arrigo, Giuseppe, Severino, Andrea, Piluso, Nicolò, Canino, Andrea, Francesco La Via, Antonino La Magna
Format: Article
Language:English
Subjects:
Carbonization
Correlation analysis
Curvature
Finite element method
Silicon carbide
Silicon substrates
Stress distribution
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page
container_issue
container_start_page
container_title arXiv.org
container_volume
creator Camarda, Massimo
Anzalone, Ruggero
D'Arrigo, Giuseppe
Severino, Andrea
Piluso, Nicolò
Canino, Andrea
Francesco La Via
Antonino La Magna
description In this article we develop an analytical theory that correlates the macroscopic curvature of stressed film/substrate systems with the microscopic in-plane and out-of-plane deflections of planar rotators. Extending this stress-deflection relations in the case of nonlinear stress fields and validating the results with the aid of finite element simulations. We use this theory to study the heteroepitaxial growth of cubic silicon carbide on silicon (100) and discover that due, to defects generated on the silicon substrate during the carbonization process, wafer curvature techniques may not allow the determination of the stress field in the grown films either quantitatively or qualitatively.
format article
fullrecord <record><control><sourceid>proquest</sourceid><recordid>TN_cdi_proquest_journals_2086875624</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2086875624</sourcerecordid><originalsourceid>FETCH-proquest_journals_20868756243</originalsourceid><addsrcrecordid>eNqNy0sKwjAUheEgCBbtHgKOizXpa14UF-C8pM2ttKaJ3psouHqruABHZ_B_Z8EiIeU-qTIhViwmGtM0FUUp8lxG7Fo7RDDKD87yFvwTwPJp6NCRx9D5gMA19Aa6jyCurOb9YKYdhXYWygPvAj7UFwarAfkFLKAywws0nwkQzQ8wmjZs2StDEP92zbbHw7k-JTd09wDkm9EFtHNqRFoVVZkXIpP_qTeD3Esi</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2086875624</pqid></control><display><type>article</type><title>Correlation between microstructure deflections and film/substrate curvature under generalized stress fields</title><source>ProQuest - Publicly Available Content Database</source><creator>Camarda, Massimo ; Anzalone, Ruggero ; D'Arrigo, Giuseppe ; Severino, Andrea ; Piluso, Nicolò ; Canino, Andrea ; Francesco La Via ; Antonino La Magna</creator><creatorcontrib>Camarda, Massimo ; Anzalone, Ruggero ; D'Arrigo, Giuseppe ; Severino, Andrea ; Piluso, Nicolò ; Canino, Andrea ; Francesco La Via ; Antonino La Magna</creatorcontrib><description>In this article we develop an analytical theory that correlates the macroscopic curvature of stressed film/substrate systems with the microscopic in-plane and out-of-plane deflections of planar rotators. Extending this stress-deflection relations in the case of nonlinear stress fields and validating the results with the aid of finite element simulations. We use this theory to study the heteroepitaxial growth of cubic silicon carbide on silicon (100) and discover that due, to defects generated on the silicon substrate during the carbonization process, wafer curvature techniques may not allow the determination of the stress field in the grown films either quantitatively or qualitatively.</description><identifier>EISSN: 2331-8422</identifier><language>eng</language><publisher>Ithaca: Cornell University Library, arXiv.org</publisher><subject>Carbonization ; Correlation analysis ; Curvature ; Finite element method ; Silicon carbide ; Silicon substrates ; Stress distribution</subject><ispartof>arXiv.org, 2011-10</ispartof><rights>2011. This work is published under http://arxiv.org/licenses/nonexclusive-distrib/1.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/2086875624?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>777,781,25734,36993,44571</link.rule.ids></links><search><creatorcontrib>Camarda, Massimo</creatorcontrib><creatorcontrib>Anzalone, Ruggero</creatorcontrib><creatorcontrib>D'Arrigo, Giuseppe</creatorcontrib><creatorcontrib>Severino, Andrea</creatorcontrib><creatorcontrib>Piluso, Nicolò</creatorcontrib><creatorcontrib>Canino, Andrea</creatorcontrib><creatorcontrib>Francesco La Via</creatorcontrib><creatorcontrib>Antonino La Magna</creatorcontrib><title>Correlation between microstructure deflections and film/substrate curvature under generalized stress fields</title><title>arXiv.org</title><description>In this article we develop an analytical theory that correlates the macroscopic curvature of stressed film/substrate systems with the microscopic in-plane and out-of-plane deflections of planar rotators. Extending this stress-deflection relations in the case of nonlinear stress fields and validating the results with the aid of finite element simulations. We use this theory to study the heteroepitaxial growth of cubic silicon carbide on silicon (100) and discover that due, to defects generated on the silicon substrate during the carbonization process, wafer curvature techniques may not allow the determination of the stress field in the grown films either quantitatively or qualitatively.</description><subject>Carbonization</subject><subject>Correlation analysis</subject><subject>Curvature</subject><subject>Finite element method</subject><subject>Silicon carbide</subject><subject>Silicon substrates</subject><subject>Stress distribution</subject><issn>2331-8422</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2011</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><recordid>eNqNy0sKwjAUheEgCBbtHgKOizXpa14UF-C8pM2ttKaJ3psouHqruABHZ_B_Z8EiIeU-qTIhViwmGtM0FUUp8lxG7Fo7RDDKD87yFvwTwPJp6NCRx9D5gMA19Aa6jyCurOb9YKYdhXYWygPvAj7UFwarAfkFLKAywws0nwkQzQ8wmjZs2StDEP92zbbHw7k-JTd09wDkm9EFtHNqRFoVVZkXIpP_qTeD3Esi</recordid><startdate>20111021</startdate><enddate>20111021</enddate><creator>Camarda, Massimo</creator><creator>Anzalone, Ruggero</creator><creator>D'Arrigo, Giuseppe</creator><creator>Severino, Andrea</creator><creator>Piluso, Nicolò</creator><creator>Canino, Andrea</creator><creator>Francesco La Via</creator><creator>Antonino La Magna</creator><general>Cornell University Library, arXiv.org</general><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>L6V</scope><scope>M7S</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope></search><sort><creationdate>20111021</creationdate><title>Correlation between microstructure deflections and film/substrate curvature under generalized stress fields</title><author>Camarda, Massimo ; Anzalone, Ruggero ; D'Arrigo, Giuseppe ; Severino, Andrea ; Piluso, Nicolò ; Canino, Andrea ; Francesco La Via ; Antonino La Magna</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-proquest_journals_20868756243</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2011</creationdate><topic>Carbonization</topic><topic>Correlation analysis</topic><topic>Curvature</topic><topic>Finite element method</topic><topic>Silicon carbide</topic><topic>Silicon substrates</topic><topic>Stress distribution</topic><toplevel>online_resources</toplevel><creatorcontrib>Camarda, Massimo</creatorcontrib><creatorcontrib>Anzalone, Ruggero</creatorcontrib><creatorcontrib>D'Arrigo, Giuseppe</creatorcontrib><creatorcontrib>Severino, Andrea</creatorcontrib><creatorcontrib>Piluso, Nicolò</creatorcontrib><creatorcontrib>Canino, Andrea</creatorcontrib><creatorcontrib>Francesco La Via</creatorcontrib><creatorcontrib>Antonino La Magna</creatorcontrib><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science &amp; Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>AUTh Library subscriptions: ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Central</collection><collection>SciTech Premium Collection</collection><collection>ProQuest Engineering Collection</collection><collection>Engineering Database</collection><collection>ProQuest - Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Engineering Collection</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Camarda, Massimo</au><au>Anzalone, Ruggero</au><au>D'Arrigo, Giuseppe</au><au>Severino, Andrea</au><au>Piluso, Nicolò</au><au>Canino, Andrea</au><au>Francesco La Via</au><au>Antonino La Magna</au><format>book</format><genre>document</genre><ristype>GEN</ristype><atitle>Correlation between microstructure deflections and film/substrate curvature under generalized stress fields</atitle><jtitle>arXiv.org</jtitle><date>2011-10-21</date><risdate>2011</risdate><eissn>2331-8422</eissn><abstract>In this article we develop an analytical theory that correlates the macroscopic curvature of stressed film/substrate systems with the microscopic in-plane and out-of-plane deflections of planar rotators. Extending this stress-deflection relations in the case of nonlinear stress fields and validating the results with the aid of finite element simulations. We use this theory to study the heteroepitaxial growth of cubic silicon carbide on silicon (100) and discover that due, to defects generated on the silicon substrate during the carbonization process, wafer curvature techniques may not allow the determination of the stress field in the grown films either quantitatively or qualitatively.</abstract><cop>Ithaca</cop><pub>Cornell University Library, arXiv.org</pub><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier EISSN: 2331-8422
ispartof arXiv.org, 2011-10
issn 2331-8422
language eng
recordid cdi_proquest_journals_2086875624
source ProQuest - Publicly Available Content Database
subjects Carbonization
Correlation analysis
Curvature
Finite element method
Silicon carbide
Silicon substrates
Stress distribution
title Correlation between microstructure deflections and film/substrate curvature under generalized stress fields
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T14%3A18%3A54IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=document&rft.atitle=Correlation%20between%20microstructure%20deflections%20and%20film/substrate%20curvature%20under%20generalized%20stress%20fields&rft.jtitle=arXiv.org&rft.au=Camarda,%20Massimo&rft.date=2011-10-21&rft.eissn=2331-8422&rft_id=info:doi/&rft_dat=%3Cproquest%3E2086875624%3C/proquest%3E%3Cgrp_id%3Ecdi_FETCH-proquest_journals_20868756243%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2086875624&rft_id=info:pmid/&rfr_iscdi=true