Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For t...

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Bibliographic Details
Published in:arXiv.org 2010-02
Main Authors: Kuan Yen Tan, Chan, Kok Wai, Möttönen, Mikko, Morello, Andrea, Yang, Changyi, Jessica van Donkelaar, Alves, Andrew, Juha-Matti Pirkkalainen, Jamieson, David N, Clark, Robert G, Dzurak, Andrew S
Format: Article
Language:English
Subjects:
Electron spin
Electron states
Nanoelectronics
Phosphorus
Semiconductor devices
Transistors
Transport properties
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Summary:We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The devices provide a high-level of control of key parameters required for potential applications in nanoelectronics. For the donors, we resolve transitions corresponding to two charge states successively occupied by spin down and spin up electrons. The charging energies and the Lande g-factors are consistent with expectations for donors in gated nanostructures.
ISSN:2331-8422