Modeling the photo-induced inverse spin-Hall effect in Pt/semiconductor junctions

We show that the photon energy dependence of the photo-induced inverse spin-Hall effect (ISHE) signal at Pt/semiconductor junctions can be reproduced by a model that explicitly accounts for the electron spin diffusion length Ls in the semiconductor. In particular, we consider the Pt/GaAs, Pt/Ge, and...

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Bibliographic Details
Published in:Journal of applied physics 2018-07, Vol.124 (3)
Main Authors: Bottegoni, F., Zucchetti, C., Isella, G., Pinotti, E., Finazzi, M., Ciccacci, F.
Format: Article
Language:English
Subjects:
Applied physics
Conduction bands
Dependence
Diffusion length
Dimensional analysis
Electromagnetism
Electron spin
Germanium
Hall effect
Semiconductor junctions
Semiconductors
Silicon
Transport properties
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Summary:We show that the photon energy dependence of the photo-induced inverse spin-Hall effect (ISHE) signal at Pt/semiconductor junctions can be reproduced by a model that explicitly accounts for the electron spin diffusion length Ls in the semiconductor. In particular, we consider the Pt/GaAs, Pt/Ge, and Pt/Si systems: although optical spin injection and transport of spin-polarized electrons in the conduction band of these semiconductors are ruled by different mechanisms, a simple one dimensional analytical diffusion model, where Ls is the free parameter, can reproduce the ISHE data in all cases. This highlights the potentialities of the photo-induced ISHE spectra as a tool to directly address fundamental spin transport properties in semiconductors.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5037653