Gate-controlled non-volatile graphene-ferroelectric memory

In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working channels and is switched by controlling the p...

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Bibliographic Details
Published in:arXiv.org 2009-04
Main Authors: Zheng, Yi, Guang-Xin Ni, Chee-Tat Toh, Ming-Gang Zeng, Shu-Ting, Chen, Yao, Kui, Ozyilmaz, Barbaros
Format: Article
Language:English
Subjects:
Electric dipoles
Ferroelectric materials
Ferroelectricity
Graphene
Graphical representations
Low resistance
Memory devices
Thin films
Online Access:Get full text
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Summary:In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working channels and is switched by controlling the polarization of the ferroelectric thin film using gate voltage sweep. A non-volatile resistance change exceeding 200% is achieved in our graphene-ferroelectric hybrid devices. The experimental observations are explained by the electrostatic doping of graphene by electric dipoles at the ferroelectric/graphene interface.
ISSN:2331-8422
DOI:10.48550/arxiv.0904.1326