Structural and Electrical Properties of Ga2O3 Films Deposited under Different Atmospheres by Pulsed Laser Deposition

• Published in: Journal of electronic materials 2018-11, Vol.47 (11), p.6635-6640
• Main Authors: Zhang, Fabi, Li, Haiou, Guo, Qixin
• Format: Article
• Language: English
• Subjects: Atmospheric pressure; Characterization and Evaluation of Materials; Chemistry and Materials Science; Electrical properties; Electrical resistivity; Electronics and Microelectronics; Gallium oxides; Instrumentation; Integrated circuits; Materials Science; MMIC (circuits); Morphology; Nitrogen; Optical and Electronic Materials; Oxygen; Pulsed laser deposition; Pulsed lasers; Resistors; Sapphire; Solid State Physics; Substrates; Transmittance
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-018-6545-6

The effects of oxygen and nitrogen pressure on the structural and electrical properties of crystalline β -Ga 2 O 3 films grown by pulsed laser deposition were investigated. We found that varying the oxygen pressure from 1 × 10 −4  Pa to 1 × 10 −1  Pa changed the resistivity from the order of 10 2 –10 3  Ω cm. Adjusting the nitrogen pressure from 1 × 10 −4  Pa to 1 × 10 −1  Pa increased the resistivity from the order of 10 4 –10 5  Ω cm. Oxygen and nitrogen pressures in the range from 1 × 10 −4  Pa to 1 × 10 −1  Pa had no obvious influence on the crystal quality, surface morphology, or transmittance of the β -Ga 2 O 3 films grown at 500°C on sapphire substrates. All the films showed a (− 201) oriented monoclinic structure with smooth surfaces and high transmittance. The obtained β -Ga 2 O 3 films have potential for applications in thin film resistors for monolithic microwave integrated circuits.