Electron Wave Filters from Inverse Scattering Theory

Semiconductor heterostructures with prescribed energy dependence of the transmittance can be designed by combining: {\em a)} Padé approximant reconstruction of the S-matrix; {\em b)} inverse scattering theory for Schro\"dinger's equation; {\em c)} a unitary transformation which takes into...

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Bibliographic Details
Published in:arXiv.org 1996-06
Main Authors: Bessis, Daniel, Mantica, Giorgio, Mezincescu, G Andrei, Vrinceanu, Daniel
Format: Article
Language:English
Subjects:
Dependence
Digitization
Heterostructures
Inverse scattering
Wave filters
Online Access:Get full text
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Summary:Semiconductor heterostructures with prescribed energy dependence of the transmittance can be designed by combining: {\em a)} Padé approximant reconstruction of the S-matrix; {\em b)} inverse scattering theory for Schro\"dinger's equation; {\em c)} a unitary transformation which takes into account the variable mass effects. The resultant continuous concentration profile can be digitized into an easily realizable rectangular-wells structure. For illustration, we give the specifications of a 2 narrow band-pass 12 layer \(Al_cGa_{1-c}As\) filter with the high energy peak more than {\em twice narrower} than the other.
ISSN:2331-8422
DOI:10.48550/arxiv.9606209