2 step of conductance fluctuations due to the broken time-reversal symmetry in bulk-insulating BiSbTeSe2 devices

We extract the conductance fluctuations and study their magnetic field dependence in the gate-dependent transport of topological electrons in bulk-insulating BiSbTeSe2 devices. With the increasing magnetic field, the conductance fluctuation magnitudes are found to reduce by a ratio of 2 and form a q...

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Bibliographic Details
Published in:Applied physics letters 2018-06, Vol.112 (24)
Main Authors: Zhang, Shuai, Pan, Xing-Chen, Li, Zhaoguo, Xie, Faji, Qin, Yuyuan, Cao, Lu, Wang, Xuefeng, Wang, Xinran, Miao, Feng, Song, Fengqi, Wang, Baigeng
Format: Article
Language:English
Subjects:
Applied physics
Dependence
Magnetic fields
Resistance
Symmetry
Topological insulators
Transport
Variation
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Summary:We extract the conductance fluctuations and study their magnetic field dependence in the gate-dependent transport of topological electrons in bulk-insulating BiSbTeSe2 devices. With the increasing magnetic field, the conductance fluctuation magnitudes are found to reduce by a ratio of 2 and form a quantized step. The step is observed both in n-type and p-type transport. This is related to the breaking of the time reversal symmetry of three-dimensional topological insulators.
ISSN:0003-6951
1077-3118
DOI:10.1063/1.5031013