Evolution of In-Plane Magnetic Anisotropy In Sputtered FeTaN/TaN/FeTaN Sandwich Films

FeTaN/TaN/FeTaN sandwich films, FeTaN/TaN and TaN/FeTaN bilayers were synthesized by using RF magnetron sputtering. The magnetic properties, crystalline structures, microstructures and surface morphologies of the as-deposited samples were characterized using angle-resolved M-H loop tracer, VSM, XRD,...

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Bibliographic Details
Published in:arXiv.org 2003-05
Main Authors: Nie, H B, Ong, C K, Wang, J P, Li, Z W
Format: Article
Language:English
Subjects:
Anisotropy
Coupling
Evolution
Interface roughness
Interlayers
Magnetic anisotropy
Magnetic properties
Magnetron sputtering
Morphology
Switching
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Summary:FeTaN/TaN/FeTaN sandwich films, FeTaN/TaN and TaN/FeTaN bilayers were synthesized by using RF magnetron sputtering. The magnetic properties, crystalline structures, microstructures and surface morphologies of the as-deposited samples were characterized using angle-resolved M-H loop tracer, VSM, XRD, TEM, AES and AFM. An evolution of the in-plane anisotropy was observed with the changing thickness of the nonmagnetic TaN interlayer in the FeTaN/TaN/FeTaN sandwiches, such as the easy-hard axis switching and the appearing of biaxial anisotropy. It is ascribed to three possible mechanisms, which are interlayer magnetic coupling, stress, and interface roughness, respectively. Interlayer coupling and stress anisotropies may be the major reasons to cause the easy-hard axis switching in the sandwiches. Whereas, magnetostatic and interface anisotropies may be the major reasons to cause biaxial anisotropy in the sandwiches, in which magnetostatic anisotropy is the dominant one.
ISSN:2331-8422
DOI:10.48550/arxiv.0305688