Dissipation effects in superconducting heterostructures with tungsten nanorods as weak links

Thin-film hybrid heterostructures formed by superconducting molybdenum-rhenium-alloy films with a critical temperature of about 9 K and nanoscale silicon-based semiconducting interlayers with metallic tungsten nanorods have been fabricated and studied. Current-voltage characteristics of the junction...

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Bibliographic Details
Published in:Low temperature physics (Woodbury, N.Y.) N.Y.), 2018-03, Vol.44 (3), p.252-256
Main Authors: Shaternik, V. E., Shapovalov, A. P., Suvorov, O. Yu, Zhitlukhina, E. S., Belogolovskii, M. A., Febvre, P., Kordyuk, A. A.
Format: Article
Language:English
Subjects:
Critical temperature
Current voltage characteristics
Dissipation
Engineering Sciences
Heterostructures
Interlayers
Irradiation
Micro and nanotechnologies
Microelectronics
Nanorods
Resistance
Rhenium
Silicon
Slip
Superconductivity
Thin films
Tungsten
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Summary:Thin-film hybrid heterostructures formed by superconducting molybdenum-rhenium-alloy films with a critical temperature of about 9 K and nanoscale silicon-based semiconducting interlayers with metallic tungsten nanorods have been fabricated and studied. Current-voltage characteristics of the junctions were measured at 4.2 K and under influence of 11 GHz microwave irradiation. The evidence of a quasi-one-dimensional transport through the tungsten weak links disrupted by phase-slip centers was revealed in MoRe/doped Si/MoRe trilayers under irradiation by a high-frequency field. Also, measured current-voltage characteristics of five-layer MoRe/doped Si/MoRe/doped Si/MoRe devices exhibit a strong influence of a dissipation state in the MoRe interlayer. Namely, the switching from a superconducting state with low dissipation to a finite-conductance regime can be initiated by the emergence of an extra phase-slip center in the MoRe interlayer. Possible physical mechanisms of the two findings are discussed.
ISSN:1063-777X
1090-6517
DOI:10.1063/1.5024546