New Anisotropic Behavior of Quantum Hall Resistance in (110) GaAs Heterostructures at mK Temperatures and Fractional Filling Factors

Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer filling on (001) oriented substrates. In addition w...

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Bibliographic Details
Published in:arXiv.org 2003-12
Main Authors: Fischer, Frank, Grayson, Matthew, Schuberth, Erwin, Schuh, Dieter, Bichler, Max, Abstreiter, Gerhard
Format: Article
Language:English
Subjects:
Anisotropy
Electrons
Heterostructures
Polarity
Substrates
Online Access:Get full text
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Summary:Transport experiments in high mobility (110) GaAs heterostructures have been performed at very low temperatures 8 mK. At higher Landau-Levels we observe a transport anisotropy that bears some similarity with what is already seen at half-odd-integer filling on (001) oriented substrates. In addition we report the first observation of transport anisotropies within the lowest Landau-Level. This remarkable new anisotropy is independent of the current direction and depends on the polarity of the magnetic field.
ISSN:2331-8422
DOI:10.48550/arxiv.0311454