Giant planar Hall effect in colossal magnetoresistive La(0.84)Sr(0.16)MnO(3) thin films

The transverse resistivity in thin films of La(0.84)Sr(0.16)MnO(3) (LSMO)exhibits sharp field-symmetric jumps below Tc. We show that a likely source of this behavior is the giant planar Hall effect (GPHE) combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observ...

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Bibliographic Details
Published in:arXiv.org 2004-04
Main Authors: Bason, Y, Klein, L, J -B Yau, Hong, X, Ahn, C H
Format: Article
Language:English
Subjects:
Electromagnetism
Hall effect
Magnetic anisotropy
Magnetic semiconductors
Magnetoresistivity
Manganese oxides
Memory devices
Thin films
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Summary:The transverse resistivity in thin films of La(0.84)Sr(0.16)MnO(3) (LSMO)exhibits sharp field-symmetric jumps below Tc. We show that a likely source of this behavior is the giant planar Hall effect (GPHE) combined with biaxial magnetic anisotropy. The effect is comparable in magnitude to that observed recently in the magnetic semiconductor Ga(Mn)As. It can be potentially used in applications such as magnetic sensors and non-volatile memory devices.
ISSN:2331-8422
DOI:10.48550/arxiv.0404291