Magnetotransport in Single Crystal Half-Heusler Compounds

We present the results of electrical resistivity and Hall effect measurements on single crystals of HfNiSn, TiPtSn, and TiNiSn. Semiconducting behavior is observed in each case, involving the transport of a small number of highly compensated carriers. Magnetization measurements suggest that impuriti...

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Bibliographic Details
Published in:arXiv.org 2003-10
Main Authors: Ahilan, K, Bennett, M C, Aronson, M C, Anderson, N E, Canfield, P C, Munoz-Sandoval, E, Gortenmulder, T, Hendrixx, R, Mydosh, J A
Format: Article
Language:English
Subjects:
Hall effect
Magnetic moments
Magnetic permeability
Magnetism
Magnetoresistance
Magnetoresistivity
Quantum mechanics
Single crystals
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Summary:We present the results of electrical resistivity and Hall effect measurements on single crystals of HfNiSn, TiPtSn, and TiNiSn. Semiconducting behavior is observed in each case, involving the transport of a small number of highly compensated carriers. Magnetization measurements suggest that impurities and site disorder create both localized magnetic moments and extended paramagnetic states, with the susceptibility of the latter increasing strongly with reduced temperature. The magnetoresistance is sublinear or linear in fields ranging from 0.01 - 9 Tesla at the lowest temperatures. As the temperature increases, the normal quadratic magnetoresistance is regained, initially at low fields, and at the highest temperatures extending over the complete range of fields. The origin of the vanishingly small field scale implied by these measurements remains unknown, presenting a challenge to existing classical and quantum mechanical theories of magnetoresistance.
ISSN:2331-8422
DOI:10.48550/arxiv.0310369