Morphology of graphene thin film growth on SiC(0001)

Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an i...

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Bibliographic Details
Published in:arXiv.org 2007-10
Main Authors: Ohta, Taisuke, Farid El Gabaly, Bostwick, Aaron, McChesney, Jessica, Emtsev, Konstantin V, Schmid, Andreas K, Seyller, Thomas, Horn, Karsten, Rotenberg, Eli
Format: Article
Language:English
Subjects:
Bilayers
Epitaxial growth
Film growth
Graphene
Morphology
Photoelectric emission
Thickness
Thin films
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Summary:Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an identification of single and bilayer of graphene film by comparing the characteristic features in electron reflectivity spectra in LEEM to the PI-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.
ISSN:2331-8422
DOI:10.48550/arxiv.0710.0877