Morphology of graphene thin film growth on SiC(0001)

Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an i...

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Published in:arXiv.org 2007-10
Main Authors: Ohta, Taisuke, Farid El Gabaly, Bostwick, Aaron, McChesney, Jessica, Emtsev, Konstantin V, Schmid, Andreas K, Seyller, Thomas, Horn, Karsten, Rotenberg, Eli
Format: Article
Language:English
Subjects:
Bilayers
Epitaxial growth
Film growth
Graphene
Morphology
Photoelectric emission
Thickness
Thin films
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container_title arXiv.org
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creator Ohta, Taisuke
Farid El Gabaly
Bostwick, Aaron
McChesney, Jessica
Emtsev, Konstantin V
Schmid, Andreas K
Seyller, Thomas
Horn, Karsten
Rotenberg, Eli
description Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an identification of single and bilayer of graphene film by comparing the characteristic features in electron reflectivity spectra in LEEM to the PI-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.
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subjects Bilayers
Epitaxial growth
Film growth
Graphene
Morphology
Photoelectric emission
Thickness
Thin films
title Morphology of graphene thin film growth on SiC(0001)
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