Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon p...

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Bibliographic Details
Published in:Progress in crystal growth and characterization of materials 2017-12, Vol.63 (4), p.105-120
Main Authors: Li, Qiang, Lau, Kei May
Format: Article
Language:English
Subjects:
Antimonides
Arsenides
Electronics
Electronics industry
Epitaxial growth
Optoelectronics
Phosphides
Photonics
Semiconductor devices
Silicon
Silicon substrates
Transistors
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Summary:Monolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.
ISSN:0960-8974
1878-4208
DOI:10.1016/j.pcrysgrow.2017.10.001