Transport spectroscopy of a single dopant in a gated silicon nanowire

We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the low temperature conductance at energies below the...

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Bibliographic Details
Published in:arXiv.org 2006-11
Main Authors: Sellier, H, Lansbergen, G P, Caro, J, Collaert, N, Ferain, I, Jurczak, M, Biesemans, S, Rogge, S
Format: Article
Language:English
Subjects:
Arsenic
Charging
Conduction bands
Dopants
Electron spin
Electron states
Magnetic fields
Magnetic resonance
Nanowires
Resistance
Resonant tunneling
Silicon
Spectroscopy
Spectrum analysis
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Summary:We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as resonances in the low temperature conductance at energies below the conduction band edge. We observe the two possible charge states successively occupied by spin-up and spin-down electrons under magnetic field. The first resonance is consistent with the binding energy of the neutral \(D^0\) state of an arsenic donor. The second resonance shows a reduced charging energy due to the electrostatic coupling of the charged \(D^-\) state with electrodes. Excited states and Zeeman splitting under magnetic field present large energies potentially useful to build atomic scale devices.
ISSN:2331-8422
DOI:10.48550/arxiv.0608159