Impact of Si nanocrystals in a-SiOx in C-Band emission for applications in resonators structures

Si nanocrystals (Si-NC) in a-SiOx were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emis...

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Bibliographic Details
Published in:arXiv.org 2008-06
Main Authors: Figueira, D S L, Mustafa, D, Tessler, L R, Frateschi, N C
Format: Article
Language:English
Subjects:
Annealing
Broadband
C band
Crystallization
Emission analysis
Energy transfer
Erbium
High temperature
Nanocrystals
Substrates
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Summary:Si nanocrystals (Si-NC) in a-SiOx were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix to the Er3+ ions, perhaps due to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples.
ISSN:2331-8422
DOI:10.48550/arxiv.0806.1489