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Significant enhancement of ferromagnetism in Zn\(_{1-x}\)Cr\(_{x}\)Te doped with iodine as an n-type dopant

The effect of additional doping of charge impurities was investigated in a ferromagnetic semiconductor Zn\(_{1-x}\)Cr\(_{x}\)Te. It was found that the doping of iodine, which is expected to act as an n-type dopant in ZnTe, brought about a drastic enhancement of the ferromagnetism in Zn\(_{1-x}\)Cr\(...

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Bibliographic Details
Published in:arXiv.org 2006-07
Main Authors: Ozaki, Nobuhiko, Nishizawa, Nozomi, Marcet, Stephane, Kuroda, Shinji, Eryu, Osamu, Takita, Koki
Format: Article
Language:English
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Summary:The effect of additional doping of charge impurities was investigated in a ferromagnetic semiconductor Zn\(_{1-x}\)Cr\(_{x}\)Te. It was found that the doping of iodine, which is expected to act as an n-type dopant in ZnTe, brought about a drastic enhancement of the ferromagnetism in Zn\(_{1-x}\)Cr\(_{x}\)Te while the grown films remained electrically insulating. In particular, at a fixed Cr composition of x = 0.05, the ferromagnetic transition temperature Tc increased up to 300K at maximum due to the iodine doping from Tc = 30K of the undoped counterpart, while the ferromagnetism disappeared due to the doping of nitrogen as a p-type dopant. The observed systematic correlation of ferromagnetism with the doping of charge impurities of both p- and n-type, suggesting a key role of the position of Fermi level within the impurity d-state, is discussed on the basis of the double exchange interaction as a mechanism of ferromagnetism in this material.
ISSN:2331-8422
DOI:10.48550/arxiv.0607273