Depth profile photoemission study of thermally diffused Mn/GaAs (001) interfaces

We have performed a depth profile study of thermally diffused Mn/GaAs (001) interfaces using photoemission spectroscopy combined with Ar\(^+\)-ion sputtering. We found that Mn ion was thermally diffused into the deep region of the GaAs substrate and completely reacted with GaAs. In the deep region,...

Full description

Saved in:
Bibliographic Details
Published in:arXiv.org 2008-06
Main Authors: Osafune, Y, Song, G S, Hwang, J I, Ishida, Y, Kobayashi, M, Ebata, K, Ooki, Y, Fujimori, A, Okabayashi, J, Kanai, K, Kubo, K, Oshima, M
Format: Article
Language:English
Subjects:
Electron states
Ferromagnetism
Gallium arsenide
Photoelectric emission
Spectrum analysis
Substrates
Zincblende
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We have performed a depth profile study of thermally diffused Mn/GaAs (001) interfaces using photoemission spectroscopy combined with Ar\(^+\)-ion sputtering. We found that Mn ion was thermally diffused into the deep region of the GaAs substrate and completely reacted with GaAs. In the deep region, the Mn 2\(p\) core-level and Mn 3\(d\) valence-band spectra of the Mn/GaAs (001) sample heated to 600 \(^{\circ}\)C were similar to those of Ga\(_{1-x}\)Mn\(_x\)As, zinc-blende-type MnAs dots, and/or interstitial Mn in tetrahedrally coordinated by As atoms, suggesting that the Mn 3\(d\) states were essentially localized but were hybridized with the electronic states of the host GaAs. Ferromagnetism was observed in the dilute Mn phase.
ISSN:2331-8422
DOI:10.48550/arxiv.0711.3257