Evaluating root cause: The distinct roles of hydrogen and firing in activating light- and elevated temperature-induced degradation

The root cause of light- and elevated temperature-induced degradation (LeTID) in multicrystalline silicon p-type passivated emitter and rear cell (PERC) devices is still unknown. Microwave-induced remote hydrogen plasma (MIRHP) is employed to vary the concentration of bulk hydrogen and to separate t...

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Bibliographic Details
Published in:Journal of applied physics 2018-08, Vol.124 (8)
Main Authors: Jensen, M. A., Zuschlag, A., Wieghold, S., Skorka, D., Morishige, A. E., Hahn, G., Buonassisi, T.
Format: Article
Language:English
Subjects:
Applied physics
Burning time
Degradation
Emitters
Firing
High temperature
Hydrogen
Hydrogen plasma
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Summary:The root cause of light- and elevated temperature-induced degradation (LeTID) in multicrystalline silicon p-type passivated emitter and rear cell (PERC) devices is still unknown. Microwave-induced remote hydrogen plasma (MIRHP) is employed to vary the concentration of bulk hydrogen and to separate the effects of hydrogen and firing temperature in LeTID-affected wafers. We find that hydrogen is required for degradation to occur, and that samples fired prior to the introduction of hydrogen do not degrade. Importantly, samples with hydrogen that have not been fired do degrade, implying that the firing time-temperature profile does not cause LeTID. Together, these results suggest that the LeTID defect reaction consists of at least two reactants: hydrogen and one or more defects that can be separately modified by high-temperature firing. We assess the leading hypotheses for LeTID in the context of our new understanding of the necessary reactants.
ISSN:0021-8979
1089-7550
DOI:10.1063/1.5041756